Design and Simulation of Compact, High Capacitance Ratio RF MEMS Switches using High-K Dielectric Material
نویسندگان
چکیده
In this paper, RF MEMS Capacitive Switches for two different dielectrics hafnium oxide (HfO2) and silicon nitride (Si3N4) are presented. The switches have been characterized and compared in terms of RF performance. The major impact of the change from Si3N4 to HfO2 having dielectric constant 20 is the reduction in overall dimension of the switch; capacitive area is reduced by 66% leading to overall reduction of about 41%. For 50nm thick HfO2, the HfO2 switches systematically shows an improvement in the isolation by more than -8dB (-35.16 versus -26.03 dB) and better insertion Loss at 12 GHz frequency compared to Si3N4. This makes HfO2 an attractive dielectric for RF MEMS switch for new generation of low-loss high – linearity microwave switches.
منابع مشابه
Design and simulation of a RF MEMS shunt capacitive switch with low actuation voltage, low loss and high isolation
According to contact type, RF MEMS switches are generally classified into two categories: Capacitive switches and Metal-to-Metal ones. The capacitive switches are capable to tolerate a higher frequency range and more power than M-to-M switches. This paper presents a cantilever shunt capacitive RF MEMS switch with characteristics such as low trigger voltage, high capacitive ratio, short switchin...
متن کاملDesign of compact, high capacitance ratio MEMS switch for X - Band applications using high-k dielectric materials
The paper discusses the design aspects of capacitive RF MEMS Symmetric Toggle Switch (STS) with particular emphasis on device compactness, reliability, and improvement in isolation & insertion loss by incorporating hafnium dioxide (HfO2) as a dielectric material. The major impact of the change from SiO2 to HfO2 having dielectric constant of 20, is the reduction in overall dimensions of the swit...
متن کاملA Compact Model for Dielectric Charging in RF MEMS Capacitive Switches
A unified, macroscopic, one-dimensional model is presented for the quantitative description of the process of dielectric charging in RF MEMS switches. The fidelity of the model relies upon the utilization of experimentally-obtained data to assign values to model parameters that capture the non-linear behavior of the dielectric charging process. The proposed model can be easily cast in the form ...
متن کاملMEMS design with separated electrodes for actuation and RF..
This paper presents the work realized on a new RF MEMS design for micro-switch application. This design relies on the separation between the commutation and actuation electrodes for improving the switch lifetime. The design can reduce electrical charging effects during the actuation by preventing a direct contact with the actuation electrode. The proposed structure is optimized by addressing ke...
متن کاملReliability of RF MEMS Switches at High and Low Temperatures: Modeling, Simulation and Experiment
This paper examines the reliability of RF MEMS switches when operational temperatures in the range -60C to 100C are envisioned. The basic operation of a capacitive MEMS switch is described and two tools to examine device reliability, modeling and on-chip experimentation, are discussed for the case of capacitive MEMS switches. 1-D, 2-D and 3-D models are presented with emphasis on 3-D coupled-fi...
متن کامل